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SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2669
( F5V90HVX2 )
900V 5A
FEATURES *oe Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. *oe static Rds(on) is small. The *oe switching time is fast. The *oe Avalanche resistance guaranteed. APPLICATION
*oe Switching power supply of AC 240V input
OUTLINE DIMENSIONS
Case : TO-220 (Unit : mm)
*oe High voltage power supply *oe Inverter
RATINGS
*oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Conditions Ratings Storage Temperature Tstg -55*150 Channel Temperature Tch 150 Drain-Source Voltage VDSS 900 Gate-Source Voltage VGSS *}30 Continuous Drain Current* DC*j i ID 5 Continuous Drain Current* Peak) i IDP Pulse width*...10Es, Duty cycle*...1/1000 1 Continuous Source Current* DC*j i IS 5 Total Power Dissipation PT 60 Repetitive Avalanche Current IAR Tch= 150*Z 5 Single Avalanche Energy EAS Tch= 25*Z 100 Repetitive Avalanche Energy EAR Tch= 25*Z 10 Mounting Torque TOR * i Recommended torque *0.3 Nm *j F 0.5 Unit *Z V
A W A mJ Nm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
HVX-2 Series Power MOSFET
Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranconductance Static Drain-Source On-tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions
2SK2669 ( F5V90HVX2 )
Min. 900 Typ. Max. 250 0.1 2.4 2.5 4.0 2.1 3.0 Unit V A S V
ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = 30V, VDS = 0V ID = 2.5A, VDS = 10V ID =2.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 2.5A, VGS = 0V junction to case VGS = 10V, ID = 5A, VDD = 400V VDS = 25V, VGS = 0V, f = 1MHZ ID = 2.5A, VGS = 10V, RL = 60
45 1140 23 105 55 210
2.8 3.5 1.5 2.08 / nC pF 100 350 ns
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2669
10 Tc = -55C
Transfer Characteristics
25C 8
Drain Current ID [A]
6
100C 150C
4
2 VDS = 25V TYP 0 0 5 10 15 20
Gate-Source Voltage VGS [V]
2SK2669
100
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) []
10
ID = 2.5A
1
0.1
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [C]
2SK2669
6
Gate Threshold Voltage
5
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [C]
2SK2669
10
Safe Operating Area
100s 200s
1
Drain Current ID [A]
R DS(ON) limit
1ms
0.1
10ms DC
Tc = 25C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
2SK2669
Transient Thermal Impedance
10
1
Transient Thermal Impedance jc(t) [C/W]
0.1
0.01 10-4 10-3
10-2
10-1
100
101
Time t [s]
2SK2669
100
Single Avalanche Energy Derating
Single Avalanche Energy Derating [%]
80
60
40
20
0
0
50
100
150
Starting Channel Temperature Tch [C]
2SK2669
10000
Capacitance
Ciss 1000
Capacitance Ciss Coss Crss [pF]
100
Coss
Crss
10
f=1MHz Ta=25C TYP 1 0 20 40 60 80 100
Drain-Source Voltage VDS [V]
2SK2669
Single Avalanche Current - Inductive Load
VDD = 100V VGS = 15V 0V Rg = 60 IAS = 5A
10
Single Avalanche Current IAS [A]
EAR = 10mJ
EAS = 100mJ
1 0.1 1
10
100
Inductance L [mH]
2SK2669
100
Power Derating
80
Power Derating [%]
60
40
20
0
0
50
100
150
Case Temperature Tc [C]
2SK2669
500
Gate Charge Characteristics
20
VDS
Drain-Source Voltage VDS [V]
VDD = 400V 200V 300 100V
VGS
15
10 200
5 100 ID = 5A TYP 0 0 20 40 60 80 0 100
Gate Charge Qg [nC]
Gate-Source Voltage VGS [V]
400

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